SK Hynix: DDR5 memory in 2020, while DDR6 development begins

SK Hynix expects to see DDR5 hit in 2020 and will begin at DDR5-5200, while the DDR6 standard is still in development.
SK Hynix research fellow Kim Dong-Kyun has said that the DDR5 memory standard could hit the P{C next year, where it will kick things off at a huge DDR5-5200 offering twice the bandwidth of DDR4-2666...

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HPE predicts storage-class memory will replace NAND flash

Storage-class memory (SCM) overcomes the limitations of NAND flash, which makes the takeover inevitable.
Storage-class memory (SCM), RAM that has the ability to retain its contents like NAND flash memory but the speed of DRAM, will eventually supplant flash as the high-speed storage medium of choice.

That’s the prediction of Ivan Iannaccone, vice president and general manager of HPE’s 3PAR storage unit. But he adds that it will take some time.

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Intel STT-MRAM Technology Is Ready for Mass Production

At the International Solid-State Circuits Conference Tuesday, Intel revealed that spin-transferable torque magnetoresistive RAM (STT-MRAM) technology is ready for mass production. The company is expected to use its old but reliable 22FFL FinFET process to manufacture the memory chips, as reported today by EE Times.

Intel’s STT-MRAM Technology
Due to its high endurance and strong retention, STT-MRAM can be a future alternative to embedded SRAM and NAND flash technologies...

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SK Hynix plans to spend $107 billion building four memory chip plants

SEOUL (Reuters) - South Korea’s SK Hynix Inc on Thursday said it would spend $107 billion building four factories, as the memory chip maker seeks to maintain its competitiveness in the face of Chinese efforts to become a leading chipmaking nation.
The chip fabrication plants will be built on a 4.5 million square meter site south of Seoul beginning 2022, complementing two existing domestic factories that will receive a separate 55 trillion won ($49 billion) investment over the next decade...

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Western Digital Develops Low-Latency Flash to Compete with Intel Optane

Western Digital is working on its own low-latency flash memory that will offer a higher performance and endurance when compared to conventional 3D NAND, ultimately designed to compete against Optane storage.

At Storage Field Day this week, Western Digital spoke about its new Low Latency Flash NAND. The technology is meant to fit somewhere between 3D NAND and DRAM, similar to Intel's Optane storage and Samsung's Z-NAND. Similar to those technologies, according to Western Digital, its LLF memory will feature access time “in the microsecond range”, using 1 bit-per-cell and 2 bit-per-cell architectures.

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Samsung 8 Gb, 10nm-Class DDR4 DRAM Coming This Year

Samsung has been revealing new memory products at a steady pace over the last few months. It added one more to the list with today's announcement that it's made what it claims is the industry's first third-generation, 10nm-class (1z-nm) 8Gb DDR4 DRAM.

For background, 10nm-class represents 10-19nm. Here's why that matters: Samsung wants to prepare for "an accelerated global IT transition to next-generation DRAM interfaces, such as DDR5, LPDDR5 and GDDR6." 1z-nm is said to enable that by offering an increase to manufacturing productivity over the previous generation of 10nm-class 8Gb DDR4 of more than 20 percent.

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CFexpress 2.0 cards will be offered in three sizes with different maximum speeds

In February, the CompactFlash Association announced the CFexpress 2.0 specification, a follow-up to the CFexpress 1.0 specification first revealed in late 2016. The new 2.0 spec update brings two more form factors to CFexpress, both targeting industrial and professional imaging markets, according to the association. The two new form factors join the original, ushering in Type A, Type B and Type C cards.

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Samsung Rings B-Die Memory Death Knell

Overclockers love Samsung's B-Die memory, but the company is unceremoniously killing it off. According to the consumer DIMM section of Samsung’s latest Product Guide, B-Die memory "dies," M-Die matures, A-Die ascends, and 32GB UDIMMs really are available in Q2 2019.

We’ve yet to see whether A-die chips will have the overclocking flexibility to match or exceed that of the current B-Die products that have become the memory of choice for overclockers on Intel and AMD platforms alike.

The new A-Die offers the advantage of higher available chip density...

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SK Hynix vai dar início as amostragens de memórias QLC 4D NAND de 96 camadas

A SK Hynix anunciou que vai dar início as amostragens das suas primeiras memórias QLC 4D NAND flash de 96 camadas. Se você não se lembra, no ano passado a empresa apresentou o seu conceito para tornar o custo das memórias NAND mais baixo com o projeto de “empilhar” o circuito periférico sob as camadas de células de memória. ..

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Maxio Technology: New Line of Cheaper NVMe SSD Controllers

Known primarily for controllers designed for inexpensive SATA SSDs, Maxio Technology is now expanding into the space of higher-performance drives featuring a PCIe interface. At Computex, the company demonstrated its MAP1000 lineup of PCIe SSD controllers aimed at cheaper (as well as higher-end) solutions.

Maxio’s family of PCIe SSD controllers includes three chips: the MAP1001...

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Toshiba Unveils XFMEXPRESS Form Factor for NVMe SSDs

XFMEXPRESS is Toshiba's latest bet on bringing high-performance storage to ultra-mobile, IoT (Internet of things) and embedded devices. A XFMEXPRESS card will measure 14 x 18 x 1.4mm, which makes it a bit larger and thicker than your typical microSD card. Although we use microSD as a comparison, you won't be able to use XFMEXPRESS that way. You would still need to open up the device to replace or upgrade a XFMEXPRESS drive...

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