Crucial Expands Server Memory Portfolio with its First 32GB NVDIMMs Offering

Crucial, a leading global consumer brand of Micron Technology for memory and storage upgrades, today announced a new 32GB Nonvolatile DIMM (NVDIMM) to help companies preserve critical data in the event of a system power loss and limit costly downtime. The first Crucial NVDIMM to operate at 2933 MT/s, the new module provides companies powerful and persistent memory performance while reducing the amount of NVDIMMs needed in a server.

Ir para a notícia

Micron to scoop up Intel portion of IM Flash for $1.5 billion

Micron has announced it will be exercising its call option to scoop up Intel's holding of its IM Flash joint venture.

Intel will walk away with $1.5 billion in cash, and is able to set the transaction date in the next six to twelve months.

"The payment will end Intel's noncontrolling interest in IM Flash and eliminate IM Flash member debt on Micron's balance sheet, which was $1 billion as of Nov. 29, 2018," Micron said in a statement...

Ir para a notícia

Huawei lança o NanoSD: eles são mais ou menos rápidos que o MicroSD?

Com o lançamento da gama Huawei 20 Companheiro tecnologia foi anunciada NanoSDou a evolução do atual padrão MicroSD. Para manter os smartphones mais compactos, este cartão de memória pode ser armazenado em um cartão normal. Slot NanoSIM, menor que o MicroSD. E como você já pode comprá-los na Amazon, como eles se comportam? Eles estão mais ou menos executando do que o padrão anterior?

Ir para a notícia

SK Hynix: DDR5 memory in 2020, while DDR6 development begins

SK Hynix expects to see DDR5 hit in 2020 and will begin at DDR5-5200, while the DDR6 standard is still in development.
SK Hynix research fellow Kim Dong-Kyun has said that the DDR5 memory standard could hit the P{C next year, where it will kick things off at a huge DDR5-5200 offering twice the bandwidth of DDR4-2666...

Ir para a notícia

HPE predicts storage-class memory will replace NAND flash

Storage-class memory (SCM) overcomes the limitations of NAND flash, which makes the takeover inevitable.
Storage-class memory (SCM), RAM that has the ability to retain its contents like NAND flash memory but the speed of DRAM, will eventually supplant flash as the high-speed storage medium of choice.

That’s the prediction of Ivan Iannaccone, vice president and general manager of HPE’s 3PAR storage unit. But he adds that it will take some time.

Ir para a notícia

Intel STT-MRAM Technology Is Ready for Mass Production

At the International Solid-State Circuits Conference Tuesday, Intel revealed that spin-transferable torque magnetoresistive RAM (STT-MRAM) technology is ready for mass production. The company is expected to use its old but reliable 22FFL FinFET process to manufacture the memory chips, as reported today by EE Times.

Intel’s STT-MRAM Technology
Due to its high endurance and strong retention, STT-MRAM can be a future alternative to embedded SRAM and NAND flash technologies...

Ir para a notícia

SK Hynix plans to spend $107 billion building four memory chip plants

SEOUL (Reuters) - South Korea’s SK Hynix Inc on Thursday said it would spend $107 billion building four factories, as the memory chip maker seeks to maintain its competitiveness in the face of Chinese efforts to become a leading chipmaking nation.
The chip fabrication plants will be built on a 4.5 million square meter site south of Seoul beginning 2022, complementing two existing domestic factories that will receive a separate 55 trillion won ($49 billion) investment over the next decade...

Ir para a notícia

Western Digital Develops Low-Latency Flash to Compete with Intel Optane

Western Digital is working on its own low-latency flash memory that will offer a higher performance and endurance when compared to conventional 3D NAND, ultimately designed to compete against Optane storage.

At Storage Field Day this week, Western Digital spoke about its new Low Latency Flash NAND. The technology is meant to fit somewhere between 3D NAND and DRAM, similar to Intel's Optane storage and Samsung's Z-NAND. Similar to those technologies, according to Western Digital, its LLF memory will feature access time “in the microsecond range”, using 1 bit-per-cell and 2 bit-per-cell architectures.

Ir para a notícia

Samsung 8 Gb, 10nm-Class DDR4 DRAM Coming This Year

Samsung has been revealing new memory products at a steady pace over the last few months. It added one more to the list with today's announcement that it's made what it claims is the industry's first third-generation, 10nm-class (1z-nm) 8Gb DDR4 DRAM.

For background, 10nm-class represents 10-19nm. Here's why that matters: Samsung wants to prepare for "an accelerated global IT transition to next-generation DRAM interfaces, such as DDR5, LPDDR5 and GDDR6." 1z-nm is said to enable that by offering an increase to manufacturing productivity over the previous generation of 10nm-class 8Gb DDR4 of more than 20 percent.

Ir para a notícia

CFexpress 2.0 cards will be offered in three sizes with different maximum speeds

In February, the CompactFlash Association announced the CFexpress 2.0 specification, a follow-up to the CFexpress 1.0 specification first revealed in late 2016. The new 2.0 spec update brings two more form factors to CFexpress, both targeting industrial and professional imaging markets, according to the association. The two new form factors join the original, ushering in Type A, Type B and Type C cards.

Ir para a notícia