Samsung announces 512GB DDR5 modules

All memory producers are engaged in the transition from DDR4 to DDR5 and the announcements of follow more and more frequent. Samsung unveiled a 512 GB DDR5 memory module based on an 8-layer TSV structure and HKMG (High-K Metal Gate) material that reduces consumption by 13% while at the same time doubling performance compared to DDR4. Here are the links to some articles published on the main Italian and foreign technology sites:

OFFICIAL SITE – https://news.samsung.com/global/samsung-develops-industrys-first-hkmg-based-ddr5-memory-ideal-for-bandwidth-intensive-advanced-computing-applications

ITALY – https://www.hwupgrade.it/news/memorie/samsung-ddr5-la-piu-avanzata-512-gb-e-velocita-vertiginose-grazie-a-un-cambio-di-materiale_96481.html

ITALY – https://www.nexthardware.com/news/samsung-annuncia-i-moduli-ddr5-da-512gb-9338